description AMS2306 is the n-channel logic enhancement mode power field effect transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low in-line power loss are required. the product is in a very small o utline surface mount package. pin configuration sot-23-3l 1.gate 2.source 3.drain ordering information part number package part marking AMS2306 g sot-23-3l g 04ya process code : a ~ z ; a ~ z feature 30v/3.5a, r ds(on) = 55m-ohm (typ.) @vgs = 4.5v 30v/3.1a, r ds(on) = 80m-ohm @vgs = 2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-23-3l package design 3 1 2 d g s
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electrical characteristics = a3 ? em parameter symbol condition min typ max unit static 1b3y0kgonbc6 kb635nol0 oodi3.6 o =k<>1gg o ug ?coxe 1 ?emcna -c o u3i6 a2b6x2odn oodi3.6 o ug=i2> o 1g ?ougxe 1 ?emcna blc -lc o u3i6 t6353.6 tnbb60i e ugg o 1g ?coxo ug ? R R dynamic aoi3d u3i6 t23b.6 g . o 1g ?bmo o ug ?bco e 1
typical characterictics (25 unless noted)
typical characterictics (25 unless noted)
sot-23-3l package outline
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